Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon
10.1002/pssc.200461393
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sg-nus-scholar.10635-841572023-10-26T20:35:37Z Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon Park, S.-J. Lee, H.-B. Shan, W.L. Chua, S.-J. Lee, J.-H. Hahm, S.-H. ELECTRICAL & COMPUTER ENGINEERING 10.1002/pssc.200461393 Physica Status Solidi C: Conferences 2 7 2559-2563 2014-10-07T04:49:27Z 2014-10-07T04:49:27Z 2005 Conference Paper Park, S.-J., Lee, H.-B., Shan, W.L., Chua, S.-J., Lee, J.-H., Hahm, S.-H. (2005). Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon. Physica Status Solidi C: Conferences 2 (7) : 2559-2563. ScholarBank@NUS Repository. https://doi.org/10.1002/pssc.200461393 16101634 http://scholarbank.nus.edu.sg/handle/10635/84157 000230421400128 Scopus |
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10.1002/pssc.200461393 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Park, S.-J. Lee, H.-B. Shan, W.L. Chua, S.-J. Lee, J.-H. Hahm, S.-H. |
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Conference or Workshop Item |
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Park, S.-J. Lee, H.-B. Shan, W.L. Chua, S.-J. Lee, J.-H. Hahm, S.-H. |
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Park, S.-J. Lee, H.-B. Shan, W.L. Chua, S.-J. Lee, J.-H. Hahm, S.-H. Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon |
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Park, S.-J. |
title |
Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon |
title_short |
Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon |
title_full |
Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon |
title_fullStr |
Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon |
title_full_unstemmed |
Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon |
title_sort |
schottky diodes fabricated on cracked gan epitaxial layer grown on (111) silicon |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/84157 |
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1781784426015883264 |