Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE
10.1016/j.jcrysgro.2004.04.056
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2014
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sg-nus-scholar.10635-841632023-10-25T23:04:55Z Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE Zheng, Y.B. Chua, S.J. Huan, C.H.A. Miao, Z.L. ELECTRICAL & COMPUTER ENGINEERING PHYSICS A1. Atomic force microscopy A3. Molecular beam epitaxy B1. Quantum dots B2. Semiconducting III-V materials 10.1016/j.jcrysgro.2004.04.056 Journal of Crystal Growth 268 3-4 SPEC. ISS. 369-374 JCRGA 2014-10-07T04:49:31Z 2014-10-07T04:49:31Z 2004-08-01 Conference Paper Zheng, Y.B., Chua, S.J., Huan, C.H.A., Miao, Z.L. (2004-08-01). Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE. Journal of Crystal Growth 268 (3-4 SPEC. ISS.) : 369-374. ScholarBank@NUS Repository. https://doi.org/10.1016/j.jcrysgro.2004.04.056 00220248 http://scholarbank.nus.edu.sg/handle/10635/84163 000223087000007 Scopus |
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A1. Atomic force microscopy A3. Molecular beam epitaxy B1. Quantum dots B2. Semiconducting III-V materials |
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A1. Atomic force microscopy A3. Molecular beam epitaxy B1. Quantum dots B2. Semiconducting III-V materials Zheng, Y.B. Chua, S.J. Huan, C.H.A. Miao, Z.L. Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE |
description |
10.1016/j.jcrysgro.2004.04.056 |
author2 |
ELECTRICAL & COMPUTER ENGINEERING |
author_facet |
ELECTRICAL & COMPUTER ENGINEERING Zheng, Y.B. Chua, S.J. Huan, C.H.A. Miao, Z.L. |
format |
Conference or Workshop Item |
author |
Zheng, Y.B. Chua, S.J. Huan, C.H.A. Miao, Z.L. |
author_sort |
Zheng, Y.B. |
title |
Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE |
title_short |
Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE |
title_full |
Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE |
title_fullStr |
Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE |
title_full_unstemmed |
Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE |
title_sort |
selective growth of gaas quantum dots on the triangle nanocavities bounded by sio2 mask on si substrate by mbe |
publishDate |
2014 |
url |
http://scholarbank.nus.edu.sg/handle/10635/84163 |
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1781784426204626944 |