Selective growth of GaAs quantum dots on the triangle nanocavities bounded by SiO2 mask on Si substrate by MBE

• Main Authors: Zheng, Y.B., Chua, S.J., Huan, C.H.A., Miao, Z.L.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: A1. Atomic force microscopy; A3. Molecular beam epitaxy; B1. Quantum dots; B2. Semiconducting III-V materials
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84163
• Institution: National University of Singapore

10.1016/j.jcrysgro.2004.04.056