SIMS study on N diffusion in hafnium oxynitride

• Main Authors: Gui, D., Kang, J., Yu, H., Lim, H.F.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Subjects: Diffusion; Hafnium oxynitride; High-k; Segregation; SIMS
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84186
• Institution: National University of Singapore

10.1016/j.apsusc.2004.03.116