Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant

Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant

Digest of Technical Papers - Symposium on VLSI Technology

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Bibliographic Details
Main Authors: Sinha, M., Lee, R.T.P., Devi, S.N., Lo, G.-Q., Eng, F.C., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84197
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Institution: National University of Singapore
Description
Summary:Digest of Technical Papers - Symposium on VLSI Technology

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