Single silicide comprising nickel-dysprosium alloy for integration in p- and n-FinFETs with independent control of contact resistance by aluminum implant

• Main Authors: Sinha, M., Lee, R.T.P., Devi, S.N., Lo, G.-Q., Eng, F.C., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Conference or Workshop Item
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/84197
• Institution: National University of Singapore

Digest of Technical Papers - Symposium on VLSI Technology