Spin dependent tunneling device utilizing the magneto-coulomb effect

Spin dependent tunneling device utilizing the magneto-coulomb effect

10.1109/TMAG.2007.893697

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書目詳細資料
Main Authors:	Jalil, M.B.A., Tan, S.G.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Conference or Workshop Item
出版:	2014
主題:	Coulomb blockade Magneto-Coulomb effect Magnetoconductance Single electron tunneling transistor
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/84213
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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