Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT

10.1109/VLSIT.2012.6242480

Saved in:

Bibliographic Details
Main Authors:	Gong, X., Su, S., Liu, B., Wang, L., Wang, W., Yang, Y., Kong, E., Cheng, B., Han, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Conference or Workshop Item
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84315
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-84315
record_format	dspace
spelling	sg-nus-scholar.10635-843152015-01-08T00:43:55Z Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT Gong, X. Su, S. Liu, B. Wang, L. Wang, W. Yang, Y. Kong, E. Cheng, B. Han, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1109/VLSIT.2012.6242480 Digest of Technical Papers - Symposium on VLSI Technology 99-100 DTPTE 2014-10-07T04:51:16Z 2014-10-07T04:51:16Z 2012 Conference Paper Gong, X.,Su, S.,Liu, B.,Wang, L.,Wang, W.,Yang, Y.,Kong, E.,Cheng, B.,Han, G.,Yeo, Y.-C. (2012). Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT. Digest of Technical Papers - Symposium on VLSI Technology : 99-100. ScholarBank@NUS Repository. <a href="https://doi.org/10.1109/VLSIT.2012.6242480" target="_blank">https://doi.org/10.1109/VLSIT.2012.6242480</a> 9781467308458 07431562 http://scholarbank.nus.edu.sg/handle/10635/84315 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
country	Singapore
collection	ScholarBank@NUS
description	10.1109/VLSIT.2012.6242480
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Gong, X. Su, S. Liu, B. Wang, L. Wang, W. Yang, Y. Kong, E. Cheng, B. Han, G. Yeo, Y.-C.
format	Conference or Workshop Item
author	Gong, X. Su, S. Liu, B. Wang, L. Wang, W. Yang, Y. Kong, E. Cheng, B. Han, G. Yeo, Y.-C.
spellingShingle	Gong, X. Su, S. Liu, B. Wang, L. Wang, W. Yang, Y. Kong, E. Cheng, B. Han, G. Yeo, Y.-C. Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT
author_sort	Gong, X.
title	Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT
title_short	Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT
title_full	Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT
title_fullStr	Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT
title_full_unstemmed	Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT
title_sort	towards high performance ge 1-xsn x and in 0.7ga 0.3as cmos: a novel common gate stack featuring sub-400°c si 2h 6 passivation, single tan metal gate, and sub-1.3 nm eot
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84315
_version_	1681089595964391424

Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT

Similar Items