Towards high performance Ge 1-xSn x and In 0.7Ga 0.3As CMOS: A novel common gate stack featuring sub-400°C Si 2H 6 passivation, single TaN metal gate, and sub-1.3 nm EOT
10.1109/VLSIT.2012.6242480
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Main Authors: | Gong, X., Su, S., Liu, B., Wang, L., Wang, W., Yang, Y., Kong, E., Cheng, B., Han, G., Yeo, Y.-C. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84315 |
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Institution: | National University of Singapore |
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