Tunable trench gate power MOSFET: A feasible superjunction device and process technology

Tunable trench gate power MOSFET: A feasible superjunction device and process technology

IECON Proceedings (Industrial Electronics Conference)

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Bibliographic Details
Main Authors: Yang, X., Liang, Y.C., Samudra, G.S., Liu, Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84327
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Institution: National University of Singapore
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Summary:IECON Proceedings (Industrial Electronics Conference)

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