Tunable trench gate power MOSFET: A feasible superjunction device and process technology
IECON Proceedings (Industrial Electronics Conference)
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2014
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sg-nus-scholar.10635-843272015-01-09T15:58:52Z Tunable trench gate power MOSFET: A feasible superjunction device and process technology Yang, X. Liang, Y.C. Samudra, G.S. Liu, Y. ELECTRICAL & COMPUTER ENGINEERING IECON Proceedings (Industrial Electronics Conference) 1 729-733 IEPRE 2014-10-07T04:51:25Z 2014-10-07T04:51:25Z 2004 Conference Paper Yang, X.,Liang, Y.C.,Samudra, G.S.,Liu, Y. (2004). Tunable trench gate power MOSFET: A feasible superjunction device and process technology. IECON Proceedings (Industrial Electronics Conference) 1 : 729-733. ScholarBank@NUS Repository. http://scholarbank.nus.edu.sg/handle/10635/84327 NOT_IN_WOS Scopus |
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IECON Proceedings (Industrial Electronics Conference) |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Yang, X. Liang, Y.C. Samudra, G.S. Liu, Y. |
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Conference or Workshop Item |
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Yang, X. Liang, Y.C. Samudra, G.S. Liu, Y. |
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Yang, X. Liang, Y.C. Samudra, G.S. Liu, Y. Tunable trench gate power MOSFET: A feasible superjunction device and process technology |
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Yang, X. |
title |
Tunable trench gate power MOSFET: A feasible superjunction device and process technology |
title_short |
Tunable trench gate power MOSFET: A feasible superjunction device and process technology |
title_full |
Tunable trench gate power MOSFET: A feasible superjunction device and process technology |
title_fullStr |
Tunable trench gate power MOSFET: A feasible superjunction device and process technology |
title_full_unstemmed |
Tunable trench gate power MOSFET: A feasible superjunction device and process technology |
title_sort |
tunable trench gate power mosfet: a feasible superjunction device and process technology |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/84327 |
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