Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))

Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))

10.1063/1.2168511

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Bibliographic Details
Main Authors: Song, T.L., Chua, S.J., Fitzgerald, E.A.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Others
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/84403
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Institution: National University of Singapore
Description
Summary:10.1063/1.2168511

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