Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))
10.1063/1.2168511
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| Main Authors: | , , |
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| Other Authors: | |
| Format: | Others |
| Published: |
2014
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| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/84403 |
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| Institution: | National University of Singapore |