Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))

10.1063/1.2168511

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Main Authors:	Song, T.L., Chua, S.J., Fitzgerald, E.A.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Others
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/84403
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-844032024-11-14T02:28:15Z Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906)) Song, T.L. Chua, S.J. Fitzgerald, E.A. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2168511 Journal of Applied Physics 99 3 - JAPIA 2014-10-07T04:52:17Z 2014-10-07T04:52:17Z 2006-02-01 Others Song, T.L., Chua, S.J., Fitzgerald, E.A. (2006-02-01). Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906)). Journal of Applied Physics 99 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2168511 00218979 http://scholarbank.nus.edu.sg/handle/10635/84403 000235341000099 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.2168511
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Song, T.L. Chua, S.J. Fitzgerald, E.A.
format	Others
author	Song, T.L. Chua, S.J. Fitzgerald, E.A.
spellingShingle	Song, T.L. Chua, S.J. Fitzgerald, E.A. Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))
author_sort	Song, T.L.
title	Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))
title_short	Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))
title_full	Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))
title_fullStr	Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))
title_full_unstemmed	Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))
title_sort	erratum: strain relaxation due to v-pit formation in in xga 1-xn/gan epilayers grown on sapphire (journal of applied physics (2005) 98 (084906))
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/84403
_version_	1821183901432807424

Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))

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