Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))

Erratum: Strain relaxation due to V-pit formation in In xGa 1-xN/GaN epilayers grown on sapphire (Journal of Applied Physics (2005) 98 (084906))

10.1063/1.2168511

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書目詳細資料
Main Authors: Song, T.L., Chua, S.J., Fitzgerald, E.A.
其他作者: ELECTRICAL & COMPUTER ENGINEERING
格式: Others
出版: 2014
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/84403
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實物特徵
總結:10.1063/1.2168511

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