Reliably counting atomic planes of few-layer graphene (n > 4)

Reliably counting atomic planes of few-layer graphene (n > 4)

10.1021/nn102658a

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Bibliographic Details
Main Authors: Koh, Y.K., Bae, M.-H., Cahill, D.G., Pop, E.
Other Authors: MECHANICAL ENGINEERING
Format: Article
Published: 2014
Subjects:
Absorbance of monolayer graphene
Electrostatic interlayer screening
Few-layer graphene
Field-effect mobility of carriers
Graphene thickness
Number of graphene layers
Raman spectroscopy
Online Access:http://scholarbank.nus.edu.sg/handle/10635/85600
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/85600

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