Reliably counting atomic planes of few-layer graphene (n > 4)

10.1021/nn102658a

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Bibliographic Details
Main Authors:	Koh, Y.K., Bae, M.-H., Cahill, D.G., Pop, E.
Other Authors:	MECHANICAL ENGINEERING
Format:	Article
Published:	2014
Subjects:	Absorbance of monolayer graphene Electrostatic interlayer screening Few-layer graphene Field-effect mobility of carriers Graphene thickness Number of graphene layers Raman spectroscopy
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/85600
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Institution:	National University of Singapore

Description
Summary:	10.1021/nn102658a

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