Reliably counting atomic planes of few-layer graphene (n > 4)

• Main Authors: Koh, Y.K., Bae, M.-H., Cahill, D.G., Pop, E.
• Other Authors: MECHANICAL ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Absorbance of monolayer graphene; Electrostatic interlayer screening; Few-layer graphene; Field-effect mobility of carriers; Graphene thickness; Number of graphene layers; Raman spectroscopy
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/85600
• Institution: National University of Singapore

10.1021/nn102658a