High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substrates

10.1016/j.electacta.2009.01.045

Saved in:

Bibliographic Details
Main Authors:	Wijesinghe, T.L.S.L., Li, S.Q., Breese, M.B.H., Blackwood, D.J.
Other Authors:	MATERIALS SCIENCE AND ENGINEERING
Format:	Article
Published:	2014
Subjects:	Etching Lattice parameters Porous silicon Transmission electron microscopy Triple-axis X-ray diffraction
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/86399
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

id	sg-nus-scholar.10635-86399
record_format	dspace
spelling	sg-nus-scholar.10635-863992023-10-30T23:00:23Z High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substrates Wijesinghe, T.L.S.L. Li, S.Q. Breese, M.B.H. Blackwood, D.J. MATERIALS SCIENCE AND ENGINEERING PHYSICS Etching Lattice parameters Porous silicon Transmission electron microscopy Triple-axis X-ray diffraction 10.1016/j.electacta.2009.01.045 Electrochimica Acta 54 13 3671-3676 ELCAA 2014-10-07T09:50:15Z 2014-10-07T09:50:15Z 2009-05-01 Article Wijesinghe, T.L.S.L., Li, S.Q., Breese, M.B.H., Blackwood, D.J. (2009-05-01). High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substrates. Electrochimica Acta 54 (13) : 3671-3676. ScholarBank@NUS Repository. https://doi.org/10.1016/j.electacta.2009.01.045 00134686 http://scholarbank.nus.edu.sg/handle/10635/86399 000265701100027 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Etching Lattice parameters Porous silicon Transmission electron microscopy Triple-axis X-ray diffraction
spellingShingle	Etching Lattice parameters Porous silicon Transmission electron microscopy Triple-axis X-ray diffraction Wijesinghe, T.L.S.L. Li, S.Q. Breese, M.B.H. Blackwood, D.J. High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substrates
description	10.1016/j.electacta.2009.01.045
author2	MATERIALS SCIENCE AND ENGINEERING
author_facet	MATERIALS SCIENCE AND ENGINEERING Wijesinghe, T.L.S.L. Li, S.Q. Breese, M.B.H. Blackwood, D.J.
format	Article
author	Wijesinghe, T.L.S.L. Li, S.Q. Breese, M.B.H. Blackwood, D.J.
author_sort	Wijesinghe, T.L.S.L.
title	High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substrates
title_short	High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substrates
title_full	High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substrates
title_fullStr	High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substrates
title_full_unstemmed	High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substrates
title_sort	high resolution tem and triple-axis xrd investigation into porous silicon formed on highly conducting substrates
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/86399
_version_	1781784870179045376

High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substrates

Similar Items