High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substrates

High resolution TEM and triple-axis XRD investigation into porous silicon formed on highly conducting substrates

10.1016/j.electacta.2009.01.045

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Bibliographic Details
Main Authors: Wijesinghe, T.L.S.L., Li, S.Q., Breese, M.B.H., Blackwood, D.J.
Other Authors: MATERIALS SCIENCE AND ENGINEERING
Format: Article
Published: 2014
Subjects:
Etching
Lattice parameters
Porous silicon
Transmission electron microscopy
Triple-axis X-ray diffraction
Online Access:http://scholarbank.nus.edu.sg/handle/10635/86399
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/86399

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