Low partial pressure chemical vapor deposition of graphene on copper
10.1109/TNANO.2011.2160729
Saved in:
Main Authors: | Sun, J., Lindvall, N., Cole, M.T., Angel, K.T.T., Wang, T., Teo, K.B.K., Chua, D.H.C., Liu, J., Yurgens, A. |
---|---|
Other Authors: | MATERIALS SCIENCE AND ENGINEERING |
Format: | Article |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/86500 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Advances in vapor pressure modeling for electronic packaging
by: Wong, E.H., et al.
Published: (2014) -
Effect of Plasma Power on Copper Substrate Used for Synthesizing Carbon Nanotubes via Alcohol Catalytic Chemical Vapor Deposition (ACVD) Technique
by: Sureewan Phunwaree, et al.
Published: (2019) -
Unseeded vapor deposition of ZnTe crystals
by: Alcantara, Norberto T.
Published: (2001) -
Comparison between chemical vapor deposited and physical vapor deposited WSi2 metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors
by: Ong, B. S., et al.
Published: (2017) -
Fabrication of polypyrrole (p-Tolouenesulphonate doped)/metal Schottky contacts using vapor deposition
by: Roque, Mabelle, et al.
Published: (1997)