SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion

SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion

Conference Proceedings from the International Symposium for Testing and Failure Analysis

Saved in:
Bibliographic Details
Main Authors: Huang, Y., Zhu, L., Ong, K., Teo, H., Chen, S., Hua, Y., Shen, M., Gong, H.
Other Authors: MATERIALS SCIENCE AND ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/86957
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/86957

Similar Items