SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion
Conference Proceedings from the International Symposium for Testing and Failure Analysis
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2014
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sg-nus-scholar.10635-869572015-01-07T00:04:45Z SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion Huang, Y. Zhu, L. Ong, K. Teo, H. Chen, S. Hua, Y. Shen, M. Gong, H. MATERIALS SCIENCE AND ENGINEERING Conference Proceedings from the International Symposium for Testing and Failure Analysis 290-292 2014-10-07T09:56:47Z 2014-10-07T09:56:47Z 2012 Conference Paper Huang, Y.,Zhu, L.,Ong, K.,Teo, H.,Chen, S.,Hua, Y.,Shen, M.,Gong, H. (2012). SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion. Conference Proceedings from the International Symposium for Testing and Failure Analysis : 290-292. ScholarBank@NUS Repository. 9781615039791 http://scholarbank.nus.edu.sg/handle/10635/86957 NOT_IN_WOS Scopus |
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National University of Singapore |
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NUS Library |
| country |
Singapore |
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ScholarBank@NUS |
| description |
Conference Proceedings from the International Symposium for Testing and Failure Analysis |
| author2 |
MATERIALS SCIENCE AND ENGINEERING |
| author_facet |
MATERIALS SCIENCE AND ENGINEERING Huang, Y. Zhu, L. Ong, K. Teo, H. Chen, S. Hua, Y. Shen, M. Gong, H. |
| format |
Conference or Workshop Item |
| author |
Huang, Y. Zhu, L. Ong, K. Teo, H. Chen, S. Hua, Y. Shen, M. Gong, H. |
| spellingShingle |
Huang, Y. Zhu, L. Ong, K. Teo, H. Chen, S. Hua, Y. Shen, M. Gong, H. SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion |
| author_sort |
Huang, Y. |
| title |
SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion |
| title_short |
SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion |
| title_full |
SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion |
| title_fullStr |
SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion |
| title_full_unstemmed |
SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion |
| title_sort |
sims analysis for the threshold voltage shift of power mos caused by abnormal dopant diffusion |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/86957 |
| _version_ |
1681090076563472384 |