SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion
Conference Proceedings from the International Symposium for Testing and Failure Analysis
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Main Authors: | Huang, Y., Zhu, L., Ong, K., Teo, H., Chen, S., Hua, Y., Shen, M., Gong, H. |
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Other Authors: | MATERIALS SCIENCE AND ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/86957 |
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Institution: | National University of Singapore |
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