SIMS analysis for the threshold voltage shift of power MOS caused by abnormal dopant diffusion

Conference Proceedings from the International Symposium for Testing and Failure Analysis

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Bibliographic Details
Main Authors: Huang, Y., Zhu, L., Ong, K., Teo, H., Chen, S., Hua, Y., Shen, M., Gong, H.
Other Authors: MATERIALS SCIENCE AND ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/86957
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Institution: National University of Singapore
Description
Summary:Conference Proceedings from the International Symposium for Testing and Failure Analysis