Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations

Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations

Solid-State Electronics

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Bibliographic Details
Main Authors: Chan, H.Y., Srinivasan, M.P., Benistant, F., Jin, H.M., Chan, L.
Other Authors: CHEMICAL & BIOMOLECULAR ENGINEERING
Format: Article
Published: 2014
Subjects:
Binary collision approximation
Channelling
Monte Carlo
Pearson IV
Sampling calibration of profiles
Online Access:http://scholarbank.nus.edu.sg/handle/10635/90071
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/90071

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