Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations

Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations

Solid-State Electronics

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Main Authors: Chan, H.Y., Srinivasan, M.P., Benistant, F., Jin, H.M., Chan, L.
Other Authors: CHEMICAL & BIOMOLECULAR ENGINEERING
Format: Article
Published: 2014
Subjects:
Binary collision approximation
Channelling
Monte Carlo
Pearson IV
Sampling calibration of profiles
Online Access:http://scholarbank.nus.edu.sg/handle/10635/90071
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-900712023-10-31T21:36:09Z Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations Chan, H.Y. Srinivasan, M.P. Benistant, F. Jin, H.M. Chan, L. CHEMICAL & BIOMOLECULAR ENGINEERING Binary collision approximation Channelling Monte Carlo Pearson IV Sampling calibration of profiles Solid-State Electronics 49 7 1241-1247 SSELA 2014-10-09T07:01:05Z 2014-10-09T07:01:05Z 2005-07 Article Chan, H.Y., Srinivasan, M.P., Benistant, F., Jin, H.M., Chan, L. (2005-07). Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations. Solid-State Electronics 49 (7) : 1241-1247. ScholarBank@NUS Repository. 00381101 http://scholarbank.nus.edu.sg/handle/10635/90071 000230709100029 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
topic Binary collision approximation
Channelling
Monte Carlo
Pearson IV
Sampling calibration of profiles
spellingShingle Binary collision approximation
Channelling
Monte Carlo
Pearson IV
Sampling calibration of profiles
Chan, H.Y.
Srinivasan, M.P.
Benistant, F.
Jin, H.M.
Chan, L.
Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations
description Solid-State Electronics
author2 CHEMICAL & BIOMOLECULAR ENGINEERING
author_facet CHEMICAL & BIOMOLECULAR ENGINEERING
Chan, H.Y.
Srinivasan, M.P.
Benistant, F.
Jin, H.M.
Chan, L.
format Article
author Chan, H.Y.
Srinivasan, M.P.
Benistant, F.
Jin, H.M.
Chan, L.
author_sort Chan, H.Y.
title Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations
title_short Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations
title_full Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations
title_fullStr Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations
title_full_unstemmed Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations
title_sort sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 kev using monte carlo simulations
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/90071
_version_ 1781785457758044160

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