Sampling calibration of ion implantation profiles in crystalline silicon from 0.1 to 300 keV using Monte Carlo simulations

• Main Authors: Chan, H.Y., Srinivasan, M.P., Benistant, F., Jin, H.M., Chan, L.
• Other Authors: CHEMICAL & BIOMOLECULAR ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Binary collision approximation; Channelling; Monte Carlo; Pearson IV; Sampling calibration of profiles
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/90071
• Institution: National University of Singapore

Solid-State Electronics