Current saturation in zero-bandgap, top-gated graphene field-effect transistors

10.1038/nnano.2008.268

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Bibliographic Details
Main Authors:	Meric, I., Han, M.Y., Young, A.F., Ozyilmaz, B., Kim, P., Shepard, K.L.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/96143
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Institution:	National University of Singapore

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