Current saturation in zero-bandgap, top-gated graphene field-effect transistors
10.1038/nnano.2008.268
Saved in:
Main Authors: | Meric, I., Han, M.Y., Young, A.F., Ozyilmaz, B., Kim, P., Shepard, K.L. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/96143 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
The gate leakage current in graphene field-effect transistor
by: Mao, L.-F., et al.
Published: (2014) -
The gate leakage current in graphene field-effect transistor
by: Mao, L.-F., et al.
Published: (2014) -
Graphene field-effect transistors with ferroelectric gating
by: Zheng, Y., et al.
Published: (2014) -
All-solution processable top-gate organic field effect transistor
by: Gao, Ying.
Published: (2011) -
Graphene oxide gate dielectric for graphene-based monolithic field effect transistors
by: Eda, G., et al.
Published: (2014)