Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing

10.1063/1.2364834

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Main Authors:	Ong, K.K., Pey, K.L., Lee, P.S., Wee, A.T.S., Wang, X.C., Chong, Y.F.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/96264
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-962642023-10-29T21:07:19Z Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing Ong, K.K. Pey, K.L. Lee, P.S. Wee, A.T.S. Wang, X.C. Chong, Y.F. PHYSICS 10.1063/1.2364834 Applied Physics Letters 89 17 - APPLA 2014-10-16T09:21:25Z 2014-10-16T09:21:25Z 2006 Article Ong, K.K., Pey, K.L., Lee, P.S., Wee, A.T.S., Wang, X.C., Chong, Y.F. (2006). Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing. Applied Physics Letters 89 (17) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2364834 00036951 http://scholarbank.nus.edu.sg/handle/10635/96264 000241585800059 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.2364834
author2	PHYSICS
author_facet	PHYSICS Ong, K.K. Pey, K.L. Lee, P.S. Wee, A.T.S. Wang, X.C. Chong, Y.F.
format	Article
author	Ong, K.K. Pey, K.L. Lee, P.S. Wee, A.T.S. Wang, X.C. Chong, Y.F.
spellingShingle	Ong, K.K. Pey, K.L. Lee, P.S. Wee, A.T.S. Wang, X.C. Chong, Y.F. Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing
author_sort	Ong, K.K.
title	Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing
title_short	Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing
title_full	Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing
title_fullStr	Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing
title_full_unstemmed	Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing
title_sort	dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/96264
_version_	1781786420063502336

Dopant distribution in the recrystallization transient at the maximum melt depth induced by laser annealing

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