Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method

Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method

Journal of Applied Physics

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Main Authors: Zhang, K., Zhu, F., Huan, C.H.A., Wee, A.T.S.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96310
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-963102015-01-16T09:50:46Z Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method Zhang, K. Zhu, F. Huan, C.H.A. Wee, A.T.S. PHYSICS Journal of Applied Physics 86 2 974-980 JAPIA 2014-10-16T09:21:56Z 2014-10-16T09:21:56Z 1999 Article Zhang, K.,Zhu, F.,Huan, C.H.A.,Wee, A.T.S. (1999). Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method. Journal of Applied Physics 86 (2) : 974-980. ScholarBank@NUS Repository. 00218979 http://scholarbank.nus.edu.sg/handle/10635/96310 NOT_IN_WOS Scopus
institution National University of Singapore
building NUS Library
country Singapore
collection ScholarBank@NUS
description Journal of Applied Physics
author2 PHYSICS
author_facet PHYSICS
Zhang, K.
Zhu, F.
Huan, C.H.A.
Wee, A.T.S.
format Article
author Zhang, K.
Zhu, F.
Huan, C.H.A.
Wee, A.T.S.
spellingShingle Zhang, K.
Zhu, F.
Huan, C.H.A.
Wee, A.T.S.
Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method
author_sort Zhang, K.
title Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method
title_short Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method
title_full Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method
title_fullStr Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method
title_full_unstemmed Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method
title_sort effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/96310
_version_ 1681091636612825088

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