Effect of hydrogen partial pressure on optoelectronic properties of indium tin oxide thin films deposited by radio frequency magnetron sputtering method

Journal of Applied Physics

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Bibliographic Details
Main Authors: Zhang, K., Zhu, F., Huan, C.H.A., Wee, A.T.S.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96310
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Institution: National University of Singapore

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