Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide

Effect of radio-frequency bias voltage on the optical and structural properties of hydrogenated amorphous silicon carbide

10.1063/1.1367398

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Bibliographic Details
Main Authors: Cui, J., Rusli, Yoon, S.F., Teo, E.J., Yu, M.B., Chew, K., Ahn, J., Zhang, Q., Osipowicz, T., Watt, F.
Other Authors: PHYSICS
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/96335
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Institution: National University of Singapore
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Summary:10.1063/1.1367398

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