Spatial characterization of doped SiC wafers by Raman spectroscopy

Journal of Applied Physics

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Bibliographic Details
Main Authors:	Burton, J.C., Sun, L., Pophristic, M., Lukacs, S.J., Long, F.H., Feng, Z.C., Ferguson, I.T.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/97973
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Institution:	National University of Singapore

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Summary:	Journal of Applied Physics

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