Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition

Journal of Electronic Materials

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Bibliographic Details
Main Authors:	Feng, Z.C., Rohatgi, A., Tin, C.C., Hu, R., Wee, A.T.S., Se, K.P.
Other Authors:	PHYSICS
Format:	Article
Published:	2014
Subjects:	4H-SiC Fourier infrared reflectance Low pressure chemical vapor deposition Raman scattering X-ray diffraction X-ray photoelectron spectroscopy
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/98066
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-98066
record_format	dspace
spelling	sg-nus-scholar.10635-980662024-11-12T21:15:52Z Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition Feng, Z.C. Rohatgi, A. Tin, C.C. Hu, R. Wee, A.T.S. Se, K.P. PHYSICS 4H-SiC Fourier infrared reflectance Low pressure chemical vapor deposition Raman scattering X-ray diffraction X-ray photoelectron spectroscopy Journal of Electronic Materials 25 5 917-923 JECMA 2014-10-16T09:42:35Z 2014-10-16T09:42:35Z 1996-05 Article Feng, Z.C.,Rohatgi, A.,Tin, C.C.,Hu, R.,Wee, A.T.S.,Se, K.P. (1996-05). Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition. Journal of Electronic Materials 25 (5) : 917-923. ScholarBank@NUS Repository. 03615235 http://scholarbank.nus.edu.sg/handle/10635/98066 NOT_IN_WOS Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	4H-SiC Fourier infrared reflectance Low pressure chemical vapor deposition Raman scattering X-ray diffraction X-ray photoelectron spectroscopy
spellingShingle	4H-SiC Fourier infrared reflectance Low pressure chemical vapor deposition Raman scattering X-ray diffraction X-ray photoelectron spectroscopy Feng, Z.C. Rohatgi, A. Tin, C.C. Hu, R. Wee, A.T.S. Se, K.P. Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition
description	Journal of Electronic Materials
author2	PHYSICS
author_facet	PHYSICS Feng, Z.C. Rohatgi, A. Tin, C.C. Hu, R. Wee, A.T.S. Se, K.P.
format	Article
author	Feng, Z.C. Rohatgi, A. Tin, C.C. Hu, R. Wee, A.T.S. Se, K.P.
author_sort	Feng, Z.C.
title	Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition
title_short	Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition
title_full	Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition
title_fullStr	Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition
title_full_unstemmed	Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition
title_sort	structural, optical, and surface science studies of 4h-sic epilayers grown by low pressure chemical vapor deposition
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/98066
_version_	1821192666636877824

Structural, optical, and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition

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