Ultralow-energy SIMS for shallow semiconductor depth profiling

Ultralow-energy SIMS for shallow semiconductor depth profiling

10.1016/j.apsusc.2008.05.030

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Bibliographic Details
Main Authors: Chanbasha, A.R., Wee, A.T.S.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
Cesium
Depth profiling
Oxygen
Silicon
SIMS
Ultralow-energy
Online Access:http://scholarbank.nus.edu.sg/handle/10635/98505
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Institution: National University of Singapore
Description
Summary:10.1016/j.apsusc.2008.05.030

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