Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes

Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes

The effect of the dislocation line density produced by the relaxation of strain in GaAs/InxGa1-xAs multiquantum wells where x=0.155-0.23 has been studied. There is a strong correlation between the dark line density, observed by cathodoluminescence, before processing of the wafers into photodiode dev...

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Bibliographic Details
Main Authors: GRIFFIN, Paul Robert, Barnes, J., Barnham, K. W. J., Haarpaintner, G., Mazzer, M., Zanotti-Fregonara, C., Grunbaum, E., Olson, C., Rohr, C., David, J. P. R., Roberts, J. S., Grey, R., Pate, M. A.
Format: text
Language:English
Published: Institutional Knowledge at Singapore Management University 1996
Subjects:
Physical Sciences and Mathematics
Online Access:https://ink.library.smu.edu.sg/sis_research/3229
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Institution: Singapore Management University
Language: English
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Summary:The effect of the dislocation line density produced by the relaxation of strain in GaAs/InxGa1-xAs multiquantum wells where x=0.155-0.23 has been studied. There is a strong correlation between the dark line density, observed by cathodoluminescence, before processing of the wafers into photodiode devices, and the subsequent low forward bias (

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