Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes

Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes

The effect of the dislocation line density produced by the relaxation of strain in GaAs/InxGa1-xAs multiquantum wells where x=0.155-0.23 has been studied. There is a strong correlation between the dark line density, observed by cathodoluminescence, before processing of the wafers into photodiode dev...

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Main Authors: GRIFFIN, Paul Robert, Barnes, J., Barnham, K. W. J., Haarpaintner, G., Mazzer, M., Zanotti-Fregonara, C., Grunbaum, E., Olson, C., Rohr, C., David, J. P. R., Roberts, J. S., Grey, R., Pate, M. A.
Format: text
Language:English
Published: Institutional Knowledge at Singapore Management University 1996
Subjects:
Physical Sciences and Mathematics
Online Access:https://ink.library.smu.edu.sg/sis_research/3229
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spelling sg-smu-ink.sis_research-42312016-09-23T01:42:11Z Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes GRIFFIN, Paul Robert Barnes, J. Barnham, K. W. J. Haarpaintner, G. Mazzer, M. Zanotti-Fregonara, C. Grunbaum, E. Olson, C. Rohr, C. David, J. P. R. Roberts, J. S. Grey, R. Pate, M. A. The effect of the dislocation line density produced by the relaxation of strain in GaAs/InxGa1-xAs multiquantum wells where x=0.155-0.23 has been studied. There is a strong correlation between the dark line density, observed by cathodoluminescence, before processing of the wafers into photodiode devices, and the subsequent low forward bias ( 1996-11-15T08:00:00Z text https://ink.library.smu.edu.sg/sis_research/3229 info:doi/10.1063/1.363574 Research Collection School Of Computing and Information Systems eng Institutional Knowledge at Singapore Management University Physical Sciences and Mathematics
institution Singapore Management University
building SMU Libraries
continent Asia
country Singapore
Singapore
content_provider SMU Libraries
collection InK@SMU
language English
topic Physical Sciences and Mathematics
spellingShingle Physical Sciences and Mathematics
GRIFFIN, Paul Robert
Barnes, J.
Barnham, K. W. J.
Haarpaintner, G.
Mazzer, M.
Zanotti-Fregonara, C.
Grunbaum, E.
Olson, C.
Rohr, C.
David, J. P. R.
Roberts, J. S.
Grey, R.
Pate, M. A.
Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes
description The effect of the dislocation line density produced by the relaxation of strain in GaAs/InxGa1-xAs multiquantum wells where x=0.155-0.23 has been studied. There is a strong correlation between the dark line density, observed by cathodoluminescence, before processing of the wafers into photodiode devices, and the subsequent low forward bias (
format text
author GRIFFIN, Paul Robert
Barnes, J.
Barnham, K. W. J.
Haarpaintner, G.
Mazzer, M.
Zanotti-Fregonara, C.
Grunbaum, E.
Olson, C.
Rohr, C.
David, J. P. R.
Roberts, J. S.
Grey, R.
Pate, M. A.
author_facet GRIFFIN, Paul Robert
Barnes, J.
Barnham, K. W. J.
Haarpaintner, G.
Mazzer, M.
Zanotti-Fregonara, C.
Grunbaum, E.
Olson, C.
Rohr, C.
David, J. P. R.
Roberts, J. S.
Grey, R.
Pate, M. A.
author_sort GRIFFIN, Paul Robert
title Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes
title_short Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes
title_full Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes
title_fullStr Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes
title_full_unstemmed Effect of strain relaxation on forward bias dark currents in GaAs/InGaAs multiquantum well p-i-n diodes
title_sort effect of strain relaxation on forward bias dark currents in gaas/ingaas multiquantum well p-i-n diodes
publisher Institutional Knowledge at Singapore Management University
publishDate 1996
url https://ink.library.smu.edu.sg/sis_research/3229
_version_ 1770573014287515648

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