3D simulations on surface growth via chemical vapour deposition: Kinetic monte carlo investigation
In this study, we used the kinetic Monte Carlo simulation to investigate the growth dynamic of the films on a substrate by imitating the chemical vapour deposition process. As a prototype, the system was confined into three-dimensional slap where the deposit chamber was divided into array grids. The...
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th-cmuir.6653943832-534922018-09-04T10:00:59Z 3D simulations on surface growth via chemical vapour deposition: Kinetic monte carlo investigation Arjaree Thongon Supab Choopun Rattikorn Yimnirun Yongyut Laosiritaworn Engineering Materials Science Physics and Astronomy In this study, we used the kinetic Monte Carlo simulation to investigate the growth dynamic of the films on a substrate by imitating the chemical vapour deposition process. As a prototype, the system was confined into three-dimensional slap where the deposit chamber was divided into array grids. The vapour flowed in and out with varying rates and concentrations and the growth process took place on the substrate placed at the bottom of the array. Interaction among atoms was considered to take Ising-like, and Kawasaki algorithm is used in this study to observe the average thickness and its variance. The result shows that for the increasing temperature, the average thickness decreases at fixed rates and concentration. With increasing the rates, at fixed concentration, the average thickness decrease at low temperature. Furthermore, the average thickness greatly increases at low temperature with increasing the concentration, at fixed rates. © 2014 Taylor & Francis Group, LLC. 2018-09-04T09:50:20Z 2018-09-04T09:50:20Z 2014-07-24 Journal 16078489 10584587 2-s2.0-84901420608 10.1080/10584587.2014.905352 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84901420608&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/53492 |
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Engineering Materials Science Physics and Astronomy Arjaree Thongon Supab Choopun Rattikorn Yimnirun Yongyut Laosiritaworn 3D simulations on surface growth via chemical vapour deposition: Kinetic monte carlo investigation |
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In this study, we used the kinetic Monte Carlo simulation to investigate the growth dynamic of the films on a substrate by imitating the chemical vapour deposition process. As a prototype, the system was confined into three-dimensional slap where the deposit chamber was divided into array grids. The vapour flowed in and out with varying rates and concentrations and the growth process took place on the substrate placed at the bottom of the array. Interaction among atoms was considered to take Ising-like, and Kawasaki algorithm is used in this study to observe the average thickness and its variance. The result shows that for the increasing temperature, the average thickness decreases at fixed rates and concentration. With increasing the rates, at fixed concentration, the average thickness decrease at low temperature. Furthermore, the average thickness greatly increases at low temperature with increasing the concentration, at fixed rates. © 2014 Taylor & Francis Group, LLC. |
format |
Journal |
author |
Arjaree Thongon Supab Choopun Rattikorn Yimnirun Yongyut Laosiritaworn |
author_facet |
Arjaree Thongon Supab Choopun Rattikorn Yimnirun Yongyut Laosiritaworn |
author_sort |
Arjaree Thongon |
title |
3D simulations on surface growth via chemical vapour deposition: Kinetic monte carlo investigation |
title_short |
3D simulations on surface growth via chemical vapour deposition: Kinetic monte carlo investigation |
title_full |
3D simulations on surface growth via chemical vapour deposition: Kinetic monte carlo investigation |
title_fullStr |
3D simulations on surface growth via chemical vapour deposition: Kinetic monte carlo investigation |
title_full_unstemmed |
3D simulations on surface growth via chemical vapour deposition: Kinetic monte carlo investigation |
title_sort |
3d simulations on surface growth via chemical vapour deposition: kinetic monte carlo investigation |
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2018 |
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https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84901420608&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/53492 |
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