Thermal change of amorphous indium tin oxide films sputter-deposited in water vapor atmosphere

Amorphous ITO thin films were deposited on silicon wafers at room temperature by RF + DC magnetron sputtering at water vapor partial pressures between 0 and 6 × 10- 5 Torr. The O/(In + Sn) ratio was determined by Rutherford backscattering spectroscopy. The effect of water vapor on the thermal crysta...

Full description

Saved in:
Bibliographic Details
Main Authors: Wang M.H., Onai Y., Hoshi Y., Lei H., Kondo T., Uchida T., Singkarat S., Kamwanna T., Dangtip S., Aukkaravittayapun S., Nishide T., Tokiwa S., Sawada Y.
Format: Article
Language:English
Published: 2014
Online Access:http://www.scopus.com/inward/record.url?eid=2-s2.0-44349178249&partnerID=40&md5=50c9392c98d8b0755ea6b6ab0e2a25b9
http://cmuir.cmu.ac.th/handle/6653943832/5519
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Chiang Mai University
Language: English
id th-cmuir.6653943832-5519
record_format dspace
spelling th-cmuir.6653943832-55192014-08-30T02:56:38Z Thermal change of amorphous indium tin oxide films sputter-deposited in water vapor atmosphere Wang M.H. Onai Y. Hoshi Y. Lei H. Kondo T. Uchida T. Singkarat S. Kamwanna T. Dangtip S. Aukkaravittayapun S. Nishide T. Tokiwa S. Sawada Y. Amorphous ITO thin films were deposited on silicon wafers at room temperature by RF + DC magnetron sputtering at water vapor partial pressures between 0 and 6 × 10- 5 Torr. The O/(In + Sn) ratio was determined by Rutherford backscattering spectroscopy. The effect of water vapor on the thermal crystallization process was monitored by high-temperature X-ray diffraction (XRD) analysis. We found a simple dependence between the crystallization temperature and the water vapor partial pressure. After the high-temperature XRD, the films deposited at low water vapor pressures (2 × 10- 5 Torr or lower) exhibited <100> preferred orientation, whereas those deposited at high water vapor pressures (3 × 10- 5 Torr or higher) exhibited <111> preferred orientation. Introduction of water vapor during the deposition decreased carrier concentration and increased mobility. The carrier concentration after thermal crystallization was dependent on the water vapor partial pressure. © 2007 Elsevier B.V. All rights reserved. 2014-08-30T02:56:38Z 2014-08-30T02:56:38Z 2008 Article 00406090 10.1016/j.tsf.2007.10.041 THSFA http://www.scopus.com/inward/record.url?eid=2-s2.0-44349178249&partnerID=40&md5=50c9392c98d8b0755ea6b6ab0e2a25b9 http://cmuir.cmu.ac.th/handle/6653943832/5519 English
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
language English
description Amorphous ITO thin films were deposited on silicon wafers at room temperature by RF + DC magnetron sputtering at water vapor partial pressures between 0 and 6 × 10- 5 Torr. The O/(In + Sn) ratio was determined by Rutherford backscattering spectroscopy. The effect of water vapor on the thermal crystallization process was monitored by high-temperature X-ray diffraction (XRD) analysis. We found a simple dependence between the crystallization temperature and the water vapor partial pressure. After the high-temperature XRD, the films deposited at low water vapor pressures (2 × 10- 5 Torr or lower) exhibited <100> preferred orientation, whereas those deposited at high water vapor pressures (3 × 10- 5 Torr or higher) exhibited <111> preferred orientation. Introduction of water vapor during the deposition decreased carrier concentration and increased mobility. The carrier concentration after thermal crystallization was dependent on the water vapor partial pressure. © 2007 Elsevier B.V. All rights reserved.
format Article
author Wang M.H.
Onai Y.
Hoshi Y.
Lei H.
Kondo T.
Uchida T.
Singkarat S.
Kamwanna T.
Dangtip S.
Aukkaravittayapun S.
Nishide T.
Tokiwa S.
Sawada Y.
spellingShingle Wang M.H.
Onai Y.
Hoshi Y.
Lei H.
Kondo T.
Uchida T.
Singkarat S.
Kamwanna T.
Dangtip S.
Aukkaravittayapun S.
Nishide T.
Tokiwa S.
Sawada Y.
Thermal change of amorphous indium tin oxide films sputter-deposited in water vapor atmosphere
author_facet Wang M.H.
Onai Y.
Hoshi Y.
Lei H.
Kondo T.
Uchida T.
Singkarat S.
Kamwanna T.
Dangtip S.
Aukkaravittayapun S.
Nishide T.
Tokiwa S.
Sawada Y.
author_sort Wang M.H.
title Thermal change of amorphous indium tin oxide films sputter-deposited in water vapor atmosphere
title_short Thermal change of amorphous indium tin oxide films sputter-deposited in water vapor atmosphere
title_full Thermal change of amorphous indium tin oxide films sputter-deposited in water vapor atmosphere
title_fullStr Thermal change of amorphous indium tin oxide films sputter-deposited in water vapor atmosphere
title_full_unstemmed Thermal change of amorphous indium tin oxide films sputter-deposited in water vapor atmosphere
title_sort thermal change of amorphous indium tin oxide films sputter-deposited in water vapor atmosphere
publishDate 2014
url http://www.scopus.com/inward/record.url?eid=2-s2.0-44349178249&partnerID=40&md5=50c9392c98d8b0755ea6b6ab0e2a25b9
http://cmuir.cmu.ac.th/handle/6653943832/5519
_version_ 1681420440957878272