Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing
This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 1...
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| Main Authors: | , , , , , |
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| 格式: | Article |
| 語言: | English |
| 出版: |
2014
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| 在線閱讀: | http://www.scopus.com/inward/record.url?eid=2-s2.0-80053345317&partnerID=40&md5=80c714e5b9a2702d3efc4e1fb60fb559 http://cmuir.cmu.ac.th/handle/6653943832/6021 |
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