High-energy heavy ion beam annealed ion-implantation-synthesized SiC nanocrystallites and photoluminescence

by Khamsuwan J., Intarasiri S., Kirkby K., Chu P.K., Yu L.D.
Published 2014

Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

by Khamsuwan J., Intarasiri S., Kirkby K., Chu P.K., Singkarat S., Yu L.D.
Published 2014

Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

by Khamsuwan J., Intarasiri S., Kirkby K., Chu P.K., Singkarat S., Yu L.D.
Published 2014

High oxygen and carbon contents in GaAs epilayers grown below a critical substrate temperature by molecular beam epitaxy

by Goo, C.H., Lau, W.S., Chong, T.C., Tan, L.S., Chu, P.K.
Published 2014

Defect states responsible for leakage current in Ta2O5 films on Si due to Si contamination from the substrate

by Lau, W.S., Khaw, K.K., Qian, P.W., Sandler, N.P., Chu, P.K.
Published 2014

A comparison of defect states in tantalum pentoxide (Ta2O5) films after rapid thermal annealing in O2 or N2O by zero-bias thermally stimulated current spectroscopy

by Lau, W.S., Khaw, K.K., Qian, P.W., Sandler, N.P., Chu, P.K.
Published 2014

High-energy heavy ion beam annealing effect on ion beam synthesis of silicon carbide

by Khamsuwan J., Intarasiri S., Kirkby K., Jeynes C., Chu P.K., Kamwanna T., Yu L.D.
Published 2014

High-energy heavy ion beam annealing effect on ion beam synthesis of silicon carbide

by Khamsuwan J., Intarasiri S., Kirkby K., Jeynes C., Chu P.K., Kamwanna T., Yu L.D.
Published 2014

Evidence that N2O is a stronger oxidizing agent than O2 for the post-deposition annealing of Ta2O5 on Si capacitors

by Lau, W.S., Qian, P.W., Sandler, N.P., McKinley, K.A., Chu, P.K.
Published 2014