High-energy heavy ion beam annealing effect on ion beam synthesis of silicon carbide
Silicon carbide (SiC) is a superior material potentially replacing conventional silicon for high-power and high-frequency microelectronic applications. Ion beam synthesis (IBS) is a novel technique to produce large-area, high-quality and ready-to-use SiC crystals. The technique uses high-fluence car...
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| Main Authors: | , , , , , , |
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| 格式: | Article |
| 語言: | English |
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2014
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| 在線閱讀: | http://www.scopus.com/inward/record.url?eid=2-s2.0-80055101622&partnerID=40&md5=8b1167cc424b40170e73ac6342816520 http://cmuir.cmu.ac.th/handle/6653943832/6424 |
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| 機構: | Chiang Mai University |
| 語言: | English |