High-energy heavy ion beam annealed ion-implantation-synthesized SiC nanocrystallites and photoluminescence
This work explored a novel way to synthesize silicon carbide (SiC). Carbon ions at tens of keV were first implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using heavy xenon ion beams at high energy of 4 MeV with fluences of 5 × 1013 and 1 × 1014 ions/cm...
Saved in:
| Main Authors: | , , , , |
|---|---|
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2014
|
| Online Access: | http://www.scopus.com/inward/record.url?eid=2-s2.0-77951657126&partnerID=40&md5=061cce3cc7728f6efe292438eb21f918 http://cmuir.cmu.ac.th/handle/6653943832/6274 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | Chiang Mai University |
| Language: | English |