Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 1...

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Bibliographic Details
Main Authors: Khamsuwan J., Intarasiri S., Kirkby K., Chu P.K., Singkarat S., Yu L.D.
Format: Article
Language:English
Published: 2014
Online Access:http://www.scopus.com/inward/record.url?eid=2-s2.0-80053345317&partnerID=40&md5=80c714e5b9a2702d3efc4e1fb60fb559
http://cmuir.cmu.ac.th/handle/6653943832/7349
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Institution: Chiang Mai University
Language: English