High-energy heavy ion beam annealing effect on ion beam synthesis of silicon carbide

Silicon carbide (SiC) is a superior material potentially replacing conventional silicon for high-power and high-frequency microelectronic applications. Ion beam synthesis (IBS) is a novel technique to produce large-area, high-quality and ready-to-use SiC crystals. The technique uses high-fluence car...

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Bibliographic Details
Main Authors: Khamsuwan J., Intarasiri S., Kirkby K., Jeynes C., Chu P.K., Kamwanna T., Yu L.D.
Format: Article
Language:English
Published: 2014
Online Access:http://www.scopus.com/inward/record.url?eid=2-s2.0-80055101622&partnerID=40&md5=8b1167cc424b40170e73ac6342816520
http://cmuir.cmu.ac.th/handle/6653943832/6424
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Institution: Chiang Mai University
Language: English