High-energy heavy ion beam annealing effect on ion beam synthesis of silicon carbide

• المؤلفون الرئيسيون: Khamsuwan J., Intarasiri S., Kirkby K., Jeynes C., Chu P.K., Kamwanna T., Yu L.D.
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الوصول للمادة أونلاين: http://www.scopus.com/inward/record.url?eid=2-s2.0-80055101622&partnerID=40&md5=8b1167cc424b40170e73ac6342816520; http://cmuir.cmu.ac.th/handle/6653943832/6424

Silicon carbide (SiC) is a superior material potentially replacing conventional silicon for high-power and high-frequency microelectronic applications. Ion beam synthesis (IBS) is a novel technique to produce large-area, high-quality and ready-to-use SiC crystals. The technique uses high-fluence car...