Ion-beam synthesis and photoluminescence of SiC nanocrystals assisted by MeV-heavy-ion-beam annealing

• المؤلفون الرئيسيون: Khamsuwan J., Intarasiri S., Kirkby K., Chu P.K., Singkarat S., Yu L.D.
• التنسيق: مقال
• اللغة: English
• منشور في: 2014
• الوصول للمادة أونلاين: http://www.scopus.com/inward/record.url?eid=2-s2.0-80053345317&partnerID=40&md5=80c714e5b9a2702d3efc4e1fb60fb559; http://cmuir.cmu.ac.th/handle/6653943832/6021

This work explored a novel way to synthesize silicon carbide (SiC) nanocrystals for photoluminescence. Carbon ions at 90 keV were implanted in single crystalline silicon wafers at elevated temperature, followed by irradiation using xenon ion beams at an energy of 4 MeV with two low fluences of 5 × 1...