The electrical and mechanical properties of Au-V and Au- V2 O5 thin films for wear-resistant RF MEMS switches

The electrical and mechanical properties of Au-V and Au- V2 O5 thin films for wear-resistant RF MEMS switches

To explore alternatives to the use of pure Au in Ohmic contact RF microelectromechanical switches, we have measured changes in the electrical resistivity and nanoindentation hardness of a series of sputter deposited Au-V and Au- V2 O5 thin films. Increasing V content in the Au-V alloys increases res...

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Main Authors: Thirumalesh Bannuru, Walter L. Brown, Suparut Narksitipan, Richard P. Vinci
Format: Journal
Published: 2018
Subjects:
Physics and Astronomy
Online Access:https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=43049134835&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/60737
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Institution: Chiang Mai University
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spelling th-cmuir.6653943832-607372018-09-10T03:48:27Z The electrical and mechanical properties of Au-V and Au- V2 O5 thin films for wear-resistant RF MEMS switches Thirumalesh Bannuru Walter L. Brown Suparut Narksitipan Richard P. Vinci Physics and Astronomy To explore alternatives to the use of pure Au in Ohmic contact RF microelectromechanical switches, we have measured changes in the electrical resistivity and nanoindentation hardness of a series of sputter deposited Au-V and Au- V2 O5 thin films. Increasing V content in the Au-V alloys increases resistivity and hardness, which is consistent with solid solution strengthening. In the Au- V2 O5 films, the increase in resistivity is greatly reduced and the hardness is further increased as expected for dispersion strengthening with V2 O5 particles. These two phenomena are explained in terms of solute and particle effects on electron scattering and bowing of dislocations, respectively. © 2008 American Institute of Physics. 2018-09-10T03:48:27Z 2018-09-10T03:48:27Z 2008-05-09 Journal 00218979 2-s2.0-43049134835 10.1063/1.2902954 https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=43049134835&origin=inward http://cmuir.cmu.ac.th/jspui/handle/6653943832/60737
institution Chiang Mai University
building Chiang Mai University Library
country Thailand
collection CMU Intellectual Repository
topic Physics and Astronomy
spellingShingle Physics and Astronomy
Thirumalesh Bannuru
Walter L. Brown
Suparut Narksitipan
Richard P. Vinci
The electrical and mechanical properties of Au-V and Au- V2 O5 thin films for wear-resistant RF MEMS switches
description To explore alternatives to the use of pure Au in Ohmic contact RF microelectromechanical switches, we have measured changes in the electrical resistivity and nanoindentation hardness of a series of sputter deposited Au-V and Au- V2 O5 thin films. Increasing V content in the Au-V alloys increases resistivity and hardness, which is consistent with solid solution strengthening. In the Au- V2 O5 films, the increase in resistivity is greatly reduced and the hardness is further increased as expected for dispersion strengthening with V2 O5 particles. These two phenomena are explained in terms of solute and particle effects on electron scattering and bowing of dislocations, respectively. © 2008 American Institute of Physics.
format Journal
author Thirumalesh Bannuru
Walter L. Brown
Suparut Narksitipan
Richard P. Vinci
author_facet Thirumalesh Bannuru
Walter L. Brown
Suparut Narksitipan
Richard P. Vinci
author_sort Thirumalesh Bannuru
title The electrical and mechanical properties of Au-V and Au- V2 O5 thin films for wear-resistant RF MEMS switches
title_short The electrical and mechanical properties of Au-V and Au- V2 O5 thin films for wear-resistant RF MEMS switches
title_full The electrical and mechanical properties of Au-V and Au- V2 O5 thin films for wear-resistant RF MEMS switches
title_fullStr The electrical and mechanical properties of Au-V and Au- V2 O5 thin films for wear-resistant RF MEMS switches
title_full_unstemmed The electrical and mechanical properties of Au-V and Au- V2 O5 thin films for wear-resistant RF MEMS switches
title_sort electrical and mechanical properties of au-v and au- v2 o5 thin films for wear-resistant rf mems switches
publishDate 2018
url https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=43049134835&origin=inward
http://cmuir.cmu.ac.th/jspui/handle/6653943832/60737
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